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Ir2132s Integrated Circuit Chip Power Mosfet 3-Phase Bridge Driver

Anterwell Technology Ltd.

Ir2132s Integrated Circuit Chip Power Mosfet 3-Phase Bridge Driver

Brand Name : Anterwell

Model Number : IR2132S

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8000pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

High Side Floating Supply Voltage : -0.3 to 625 V

Low Side and Logic Fixed Supply Voltage : -0.3 to 25 V

Logic Ground : Vcc - 25 to Vcc + 0.3 V

Low Side Output Voltage : -0.3 to Vcc + 0.3 V

Junction Temperature : 150 °C

Storage Temperature : -55 to 150 °C

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IR2130/IR2132(J)(S) & (PbF)

3-PHASE BRIDGE DRIVER

Features

• Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune

• Gate drive supply range from 10 to 20V

• Undervoltage lockout for all channels

• Over-current shutdown turns off all six drivers

• Independent half-bridge drivers

• Matched propagation delay for all channels

• 2.5V logic compatible

• Outputs out of phase with inputs

• Cross-conduction prevention logic

• Also available LEAD-FREE

Description

The IR2130/IR2132(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V logic. A ground-referenced operational amplifier provides analog feedback of bridge current via an external current sense resistor.

A current trip function which terminates all six outputs is also derived from this resistor. An open drain FAULT signal indicates if an over-current or undervoltage shutdown has occurred. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use at high frequencies. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operate up to 600 volts.

Product Summary

VOFFSET 600V max.


IO+/- 200 mA / 420 mA


VOUT 10 - 20V


ton/off (typ.) 675 & 425 ns


Deadtime (typ.) 2.5 µs (IR2130)

0.8 µs (IR2132)

Absolute Maximum Ratings

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to VS0. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 50 through 53.

Symbol Definition Min. Max. Units
VB1,2,3 High Side Floating Supply Voltage -0.3 625 V
VS1,2,3 High Side Floating Offset Voltage VB1,2,3 - 25 VB1,2,3 + 0.3 V
VHO1,2,3 High Side Floating Output Voltage VS1,2,3 - 0.3 VB1,2,3 + 0.3 V
VCC Low Side and Logic Fixed Supply Voltage -0.3 25 V
VSS Logic Ground VCC - 25 VCC + 0.3 V
VLO1,2,3 Low Side Output Voltage -0.3 VCC + 0.3 V
VIN Logic Input Voltage (HIN1,2,3, LIN1,2,3 & ITRIP) VSS - 0.3 (VSS + 15) or (VCC + 0.3) whichever is lower V
VFLT FAULT Output Voltage VSS - 0.3 VCC + 0.3 V
VCAO Operational Amplifier Output Voltage VSS - 0.3 VCC + 0.3 V
VCA- Operational Amplifier Inverting Input Voltage VSS - 0.3 VCC + 0.3 V
dVS/dt Allowable Offset Supply Voltage Transient 50 V/ns
PD Package Power Dissipation @ TA ≤ +25°C 28 Lead DIP) 1.5 W
(28 Lead SOIC) 1.6 W
(44 Lead PLCC) 2.0 W
RthJA Thermal Resistance, Junction to Ambient (28 Lead DIP) 83 °C/W
(28 Lead SOIC) 78 °C/W
(44 Lead PLCC) 63 °C/W
TJ Junction Temperature 150 °C
TS Storage Temperature -55 150 °C
TL Lead Temperature (Soldering, 10 seconds) 300 °C

Packages

Ir2132s Integrated Circuit Chip Power Mosfet 3-Phase Bridge Driver

Ir2132s Integrated Circuit Chip Power Mosfet 3-Phase Bridge Driver

Stock Offer (Hot Sell)

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