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IRF7601PBF general purpose mosfet Power Mosfet Transistor N Channel

Anterwell Technology Ltd.

IRF7601PBF general purpose mosfet Power Mosfet Transistor N Channel

Brand Name : Anterwell

Model Number : IRF7601PBF

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 9000pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Pulsed Drain Current  : 30 A

Power Dissipation : 1.8 W

Linear Derating Factor : 14 mW/°C

Gate-to-Source Voltage : ±12 V

Peak Diode Recovery dv/dt ‚ : 5.0 V/ns

Junction and Storage Temperature : -55 to + 150 °C

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IRF7601 HEXFET® Power MOSFET

• Generation V Technology

• Ultra Low On-Resistance

• N-Channel MOSFET

• Very Small SOIC Package

• Low Profile (<1.1mm)

• Available in Tape & Reel

• Fast Switching

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.

IRF7601PBF general purpose mosfet Power Mosfet Transistor N Channel

Absolute Maximum Ratings

Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 5.7 A
ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 4.6 A
IDM Pulsed Drain Current  30 A
PD @TA = 25°C Power Dissipation 1.8 W
Linear Derating Factor 14 mW/°C
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt ‚ 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

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Product Tags:

multi emitter transistor

      

silicon power transistors

      
Wholesale IRF7601PBF general purpose mosfet Power Mosfet Transistor N Channel from china suppliers

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