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Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

Anterwell Technology Ltd.

Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

Brand Name : ISC

Model Number : BT136-600E

Certification : Original Factory Pack

Place of Origin : China

MOQ : 4000pcs

Price : Negotiation

Payment Terms : T/T, Western Union,PayPal,

Supply Ability : 240000PCS

Delivery Time : 1 Day

Packaging Details : please contact me for details

Description : Glass passivated, sensitive gate triacs

Repetitive peak off-state voltage : 600 V

Average on-state current : 4 A

Non-repetitive peak on-state current : 25 A

Storage temperature : -45~150 ℃

Package : TO-220AB

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Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

‹ Features

·With TO-220AB package

·Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.

‹

QUICK REFERENCE DATA

SYMBOL PARAMETER VALUE UNIT
VDRM Repetitive peak off-state voltage 600 V
VRRM Repetitive peak off-state voltage 600 V
IT(AV) Average on-state current 4 A
ITSM Non-repetitive peak on-state current 25 A
Tstg Storage temperature -45~150

PIN CONFIGURATION SYMBOL

Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

Triacs BT136 series E sensitive gate

Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

MECHANICAL DATA

Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate


Product Tags:

multi emitter transistor

      

silicon power transistors

      
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