2SA1736
Power Amplifier Applications
Power Switching Applications
• Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A)
• High speed switching time: tstg = 0.2 μs (typ.)
• Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
• Complementary to 2SC4541
Absolute Maximum Ratings (Ta = 25°C)
| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | −60 | V |
| Collector-emitter voltage | VCEO | −50 | V |
| Emitter-base voltage | VEBO | −6 | V |
| Collector current | IC | −3 | A |
| Base current | IB | −0.6 | A |
| Collector power dissipation | PC | 500 | mW |
| PC (Note 1) | 1000 |
| Junction temperature | Tj | 150 | °C |
| Storage temperature range | Tstg | −55 to 150 | °C |
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Stock Offer (Hot Sell)
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2SA1736 High Power Mosfet Transistors Power Amplifier , Switching Applications Images
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