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HEXFET Power MOSFET silicon power transistors IRF3205PBF

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HEXFET Power MOSFET silicon power transistors IRF3205PBF

Brand Name : anterwell

Model Number : IRF3205PBF

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : negotiation

Payment Terms : T/T, Western Union, PayPal

Supply Ability : 300pcs

Delivery Time : 1 day

Packaging Details : please contact me for details

Continuous Drain Current, VGS @ 10V : 110 A;80 A

Pulsed Drain Current : 390 A

Power Dissipation : 200 W

Linear Derating Factor : 1.3 W/°C

Gate-to-Source Voltage : ± 20 V

Avalanche Current : 62 A

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 HEXFET Power MOSFET silicon power transistors IRF3205PBF

• Advanced Process

• Technology  Ultra Low On-Resistance 

• Dynamic dv/dt Rating 

• 175°C Operating Temperature 

• Fast Switching 

• Fully Avalanche Rated 

• Lead-Free

Description

Advanced HEXFET® Power MOSFETs from International HEXFET Power MOSFET silicon power transistors IRF3205PBF

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation levels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

HEXFET Power MOSFET silicon power transistors IRF3205PBF

HEXFET Power MOSFET silicon power transistors IRF3205PBF


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npn smd transistor

      

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