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NDT456P Power Mosfet Transistor P-Channel Field Effect Transistor

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NDT456P Power Mosfet Transistor P-Channel Field Effect Transistor

Brand Name : Anterwell

Model Number : NDT456P

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 6900pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Drain-Source Voltage : -30 V

Gate-Source Voltage : ±20 V

Operating and Storage Temperature : -65 to 150 °C

Package : SOT-223

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NDT456P P-Channel Enhancement Mode Field Effect Transistor

General Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.

Features

  • -7.5 A, -30 V. RDS(ON) = 0.030 W @ VGS = -10 V
  • RDS(ON) = 0.045 W @ VGS = -4.5 V.
  • High density cell design for extremely low RDS(ON).
  • High power and current handling capability in a widely used surface mount package.

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter NDT456P Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage ±20 V
ID

Drain Current - Continuous (Note 1a)

- Pulsed

 ±7.5 A
±20 A
PD

Maximum Power Dissipation (Note 1a)

(Note 1b)

(Note 1c)

 3 W
1.3 W
1.1 W
TJ ,TSTG Operating and Storage Temperature Range -65 to 150 °C

NDT456P Power Mosfet Transistor P-Channel Field Effect Transistor

NDT456P Power Mosfet Transistor P-Channel Field Effect Transistor

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Product Tags:

power mosfet ic

      

multi emitter transistor

      
Wholesale NDT456P Power Mosfet Transistor P-Channel Field Effect Transistor from china suppliers

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